The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Jan. 07, 2015
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Hironobu Tanigawa, Kanagawa, JP;

Tetsuhiro Suzuki, Kanagawa, JP;

Katsumi Suemitsu, Kanagawa, JP;

Takuya Kitamura, Kanagawa, JP;

Eiji Kariyada, Kanagawa, JP;

Assignee:

Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/82 (2006.01); H01L 43/08 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); G11C 11/1675 (2013.01);
Abstract

The present invention provides a magnetoresistive effect element which performs writing by a novel method. In a state in which a current does not flow in a magnetization free layer MFR, the magnetization free layer MFR has a magnetic wall MWon the side of a magnetization fixed layer MFX. A magnetic wall MWis moved to the magnetic wall MWside by causing current to flow from the formed side of the magnetic wall MW. Thus, an electrical resistance Rbetween a reference layer REF and the magnetization free layer MFR changes from a low state to a high state.


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