The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Feb. 12, 2018
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Takashi Tange, Kanagawa, JP;

Tatsushi Hamaguchi, Kanagawa, JP;

Masaru Kuramoto, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01); H01L 31/12 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 21/20 (2006.01); H01L 21/205 (2006.01); H01L 21/28 (2006.01); H01L 33/16 (2010.01); H01L 33/42 (2010.01); H01L 33/06 (2010.01); H01S 5/042 (2006.01); H01S 5/343 (2006.01); H01L 33/40 (2010.01); H01S 5/22 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01L 33/32 (2013.01); H01L 21/20 (2013.01); H01L 21/205 (2013.01); H01L 21/28 (2013.01); H01L 33/0075 (2013.01); H01L 33/06 (2013.01); H01L 33/16 (2013.01); H01L 33/40 (2013.01); H01L 33/42 (2013.01); H01S 5/0425 (2013.01); H01S 5/34333 (2013.01); H01S 5/22 (2013.01); H01S 5/32341 (2013.01); H01S 2304/04 (2013.01);
Abstract

A semiconductor optical device has a multilayer structureincluding a first compound semiconductor layer, an active layer, and a second compound semiconductor layer. A second electrodeis formed on the second compound semiconductor layerthrough a contact layer. The contact layerhas a thickness of four or less atomic layers. When an interface between the contact layerand the second compound semiconductor layeris an xy-plane, a lattice constant along an x-axis of crystals constituting an interface layerA which is a part of the second compound semiconductor layer in contact with the contact layeris x, a lattice constant along a z-axis is z, a length along an x-axis in one unit of crystals constituting the contact layeris x', and a length along the z-axis is z′, (z′/x′)>(z/x) is satisfied.


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