The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Nov. 09, 2017
Applicant:

L3 Cincinnati Electronics Corporation, Mason, OH (US);

Inventor:

Yajun Wei, Cincinnati, OH (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/101 (2006.01); H01L 31/0304 (2006.01); H01L 31/109 (2006.01); H01L 31/032 (2006.01); H01L 31/072 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035263 (2013.01); H01L 31/022408 (2013.01); H01L 31/03046 (2013.01); H01L 31/035209 (2013.01); H01L 31/035236 (2013.01); H01L 31/035272 (2013.01); H01L 31/101 (2013.01); H01L 31/109 (2013.01); H01L 31/1013 (2013.01); H01L 31/032 (2013.01); H01L 31/072 (2013.01); H01L 31/1844 (2013.01); Y02E 10/544 (2013.01);
Abstract

Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer.


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