The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Aug. 08, 2016
Denso Corporation, Kariya, Aichi-pref., JP;
Kenji Kouno, Kariya, JP;
DENSO CORPORATION, Kariya, JP;
Abstract
A semiconductor device has a semiconductor substrate including a first conductivity-type drift layer, a second conductivity-type base layer disposed in a surface layer portion of the drift layer, and a second conductivity-type collector layer and a first conductivity-type cathode layer disposed opposite to the base layer with respect to the drift layer. In the semiconductor substrate, an IGBT region and a diode region are alternately and repetitively arranged. The IGBT region and the diode region are divided by a boundary between the collector layer and the cathode layer. The collector layer is defined as a first collector layer. The semiconductor device includes a second collector layer having a second conductivity-type impurity concentration higher than that of the first collector layer, at a surface of the semiconductor substrate adjacent to the first collector layer and the cathode layer.