The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Feb. 09, 2013
Applicant:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Inventor:
Tinggang Zhu, Cupertino, CA (US);
Assignee:
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 29/0619 (2013.01); H01L 29/66212 (2013.01); H01L 29/872 (2013.01);
Abstract
This invention discloses a gallium nitride based semiconductor power device disposed in a semiconductor substrate. The power device comprises a termination area disposed at a peripheral area of the semiconductor power device comprises a termination structure having at least a guard ring disposed in a trench filled with doped gallium-based epitaxial layer therein.
Zhu, Tinggang. (2019). Gallium nitride semiconductor device with improved termination scheme (U.S. Patent No. 10170563). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10170563
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile