The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Dec. 28, 2017
Nuvoton Technology Corporation, Hsinchu, TW;
Wen-Ying Wen, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A semiconductor device including a substrate of a first conductivity type, a metal-oxide-semiconductor-field-effect transistor (MOSFET), junction gate field-effect transistors (JFETs), an isolation structure, and a buried layer of a second conductivity type is provided. The MOSFET is located on the substrate and has a first epitaxial layer of the second conductivity type. The JFET is located on the substrate and has a second epitaxial layer of the second conductivity type. The isolation structure is located between the MOSFET and the JFET to separate the first epitaxial layer from the second epitaxial layer. The buried layer is located between the MOSFET and the substrate. The buried layer extends from below the MOSFET to below the isolation structure and below the JFET, so as to electrically connect the MOSFET to the first JFET.