The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Apr. 13, 2017
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
Dae Sung Eom, Cheongju-si, KR;
Assignee:
SK hynix Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 27/11568 (2017.01); H01L 27/11573 (2017.01); H01L 27/1157 (2017.01); H01L 27/11575 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01);
Abstract
A semiconductor device in accordance with an embodiment may include a cell structure, a source coupling structure, and a source discharge transistor. The cell structure may include alternately stacked first conductive patterns and first interlayer insulating layers enclosing a channel layer. The source coupling structure separated from the cell structure may include alternately stacked second conductive patterns and second interlayer insulating layers. The source discharge transistor may be coupled to the source coupling structure.