The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Apr. 30, 2015
Applicant:
Hewlett-packard Development Company, L.p., Houston, TX (US);
Inventors:
Ning Ge, Palo Alto, CA (US);
Wai Mun Wong, Singapore, SG;
Leong Yap Chia, Singapore, SG;
Ser Chia Koh, Singapore, SG;
Assignee:
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); B41J 2/045 (2006.01); B41J 2/175 (2006.01); G11C 7/04 (2006.01); G11C 11/56 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0016 (2013.01); B41J 2/0458 (2013.01); B41J 2/04541 (2013.01); B41J 2/1753 (2013.01); G11C 7/04 (2013.01); G11C 11/5664 (2013.01); G11C 13/003 (2013.01); G11C 13/0007 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/146 (2013.01); B41J 2202/13 (2013.01); G11C 2213/72 (2013.01); G11C 2213/74 (2013.01); G11C 2213/78 (2013.01); G11C 2213/79 (2013.01);
Abstract
A memory cell includes an input coupled to a read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell. A memory includes the bi-polar memristor and a one-way current conducting device, wherein the one-way current conducting device is positioned between the memristor cell output and the circuit ground, or between the read line and the memristor cell input.