The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Dec. 18, 2015
Applicant:

Siemens Aktiengesellschaft, Munich, DE;

Inventors:

Jimmy-Alexander Butron-Ccoa, Zorneding, DE;

Andreas Lindemann, Magdeburg, DE;

Gerhard Mitic, Munich, DE;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/02 (2006.01); G01R 31/26 (2014.01); G01K 7/01 (2006.01); G01R 31/04 (2006.01); H02M 1/32 (2007.01); H03K 17/08 (2006.01); G01K 3/10 (2006.01);
U.S. Cl.
CPC ...
G01R 31/2619 (2013.01); G01K 7/01 (2013.01); G01R 31/261 (2013.01); G01R 31/2608 (2013.01); G01R 31/2612 (2013.01); G01R 31/2614 (2013.01); G01R 31/2628 (2013.01); G01R 31/2642 (2013.01); G01K 3/10 (2013.01); G01R 31/046 (2013.01); H02M 2001/327 (2013.01); H03K 2017/0806 (2013.01);
Abstract

The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.


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