The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Jul. 15, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Adam M. Pyzyna, Cortlandt Manor, NY (US);

Joshua T. Smith, Croton on Hudson, NY (US);

Benjamin H. Wunsch, Mt. Kisco, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G01N 27/447 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01); H01L 21/3205 (2006.01); B01L 3/00 (2006.01);
U.S. Cl.
CPC ...
G01N 27/44791 (2013.01); B01L 3/50273 (2013.01); B01L 3/502707 (2013.01); H01L 21/02134 (2013.01); H01L 21/31053 (2013.01); H01L 21/31116 (2013.01); H01L 21/32051 (2013.01); H01L 21/32115 (2013.01); B01L 2200/10 (2013.01); B01L 2300/0645 (2013.01); B01L 2300/0887 (2013.01); B01L 2400/0421 (2013.01);
Abstract

A method for forming a nanogap includes forming a knockoff feature on a dielectric layer and forming a trench in the dielectric layer on opposite sides of the knockoff feature. A noble metal is deposited in the trenches and over the knockoff feature. A top surface is polished to level the noble metal in the trenches with a top of the dielectric layer to form electrodes in the trenches and to remove the noble metal from the knockoff feature. A nanochannel is etched into the dielectric layer such that the knockoff feature is positioned within the nanochannel. The knockoff feature is removed to form a nanogap between the electrodes.


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