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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10168143 B1

PDFFull Text
Expired
Date of Patent:
Jan. 01, 2019

Filed:

Mar. 08, 2017

Strain monitoring of mram arrays

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Anthony J. Annunziata, Stamford, CT (US);

Chandrasekharan Kothandaraman, New York, NY (US);

Thomas M. Shaw, Peekskill, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Tutunjian & Bitetto, P.C.

Vazken Alexanian

Primary Examiner:

Tarifur R Chowdhury

Assistant Examiner:

Jonathon Cook

Int. Cl.
CPC ...
G01B 9/02 (2006.01); G01B 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/08 (2006.01); H01L 23/528 (2006.01); G11C 29/00 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
G01B 11/161 (2013.01); G11C 11/161 (2013.01); G11C 29/00 (2013.01); H01L 23/528 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01);
Abstract

A method is presented for determining strain in a magnetoresistive random access memory (MRAM) structure. The method includes exposing long lines of the MRAM structure to monochromatic light to produce a diffraction pattern, measuring changes in interference fringe spacing in the diffraction pattern, determining the changes in the local strain in the MRAM structure from the measured changes in the interference fringe spacing, and assessing a performance of the MRAM structure from values of the changes in the local strain.

Find Patent Forward Citations

Annunziata, Anthony. (2019). Strain monitoring of mram arrays (U.S. Patent No. 10168143). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10168143

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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