The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2019
Filed:
Mar. 08, 2012
Shinji Tokumaru, Tokyo, JP;
Masataka Hiyoshi, Tokyo, JP;
Jiro Kondo, Tokyo, JP;
Hitoshi Dohnomae, Tokyo, JP;
Yutaka Kishida, Tokyo, JP;
Shigeru Nakazawa, Tokyo, JP;
Kozo Onoue, Tokyo, JP;
Shinji Tokumaru, Tokyo, JP;
Masataka Hiyoshi, Tokyo, JP;
Jiro Kondo, Tokyo, JP;
Hitoshi Dohnomae, Tokyo, JP;
Yutaka Kishida, Tokyo, JP;
Shigeru Nakazawa, Tokyo, JP;
Kozo Onoue, Tokyo, JP;
Silicio Ferrosolar S.L., Madrid, ES;
Abstract
Provided are: a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.