The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2019

Filed:

Nov. 11, 2014
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Keon Jae Lee, Daejeon, KR;

Myung Hwan Byun, Daejeon, KR;

Kwi Il Park, Gyeongsangbuk-do, KR;

Geon Tae Hwang, Daejeon, KR;

Chang Kyu Chung, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
A61N 1/00 (2006.01); B32B 38/00 (2006.01); H01L 41/08 (2006.01); A61N 1/378 (2006.01); B32B 38/10 (2006.01); A61N 1/36 (2006.01); H01L 41/113 (2006.01); H01L 41/312 (2013.01); B82Y 40/00 (2011.01); A61N 1/375 (2006.01); A61N 1/05 (2006.01);
U.S. Cl.
CPC ...
A61N 1/3785 (2013.01); A61N 1/3605 (2013.01); B32B 38/10 (2013.01); H01L 41/113 (2013.01); H01L 41/312 (2013.01); A61N 1/0551 (2013.01); A61N 1/36125 (2013.01); A61N 1/3756 (2013.01); B32B 2457/00 (2013.01); B82Y 40/00 (2013.01); Y10S 322/00 (2013.01); Y10S 977/948 (2013.01);
Abstract

Provided is a method for separating a nanogenerator, which includes laminating a buffer layer on a sacrificial substrate, making a nanogenerator on the buffer layer, laminating a metal layer on the nanogenerator and separating the nanogenerator from the buffer layer. Here, a nanogenerator is separated by using a stress difference between the sacrificial substrate and the metal layer, instead of an existing method in which a nanogenerator is separated from the sacrificial substrate by means of wet etching or the like. In particular, according to a difference between a tensile stress at the metal layer such as nickel and a compressive stress at the lower silicon substrate, the nanogenerator is intactly separated from the silicon oxide layer serving as a buffer layer. Therefore, the nanogenerator may be separated from the sacrificial substrate in a mechanical way, which is safer and more economic in comparison to an existing chemical separation method using an etching solution. Further, it is also possible to avoid a damage of the nanogenerator caused by an etching solution.


Find Patent Forward Citations

Loading…