The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Feb. 07, 2018
Applicant:

Delta Electronics (Shanghai) Co., Ltd., Shanghai, CN;

Inventors:

Wei Xu, Shanghai, CN;

Dingkun Shen, Shanghai, CN;

Jianfei Zheng, Shanghai, CN;

Jianping Ying, Shanghai, CN;

Zhiming Hu, Shanghai, CN;

Wei Tian, Shanghai, CN;

Wei Xie, Shanghai, CN;

Lan Wei, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02P 8/28 (2006.01); H03M 1/08 (2006.01); H02M 1/08 (2006.01); H02M 7/483 (2007.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 1/083 (2013.01); H02M 7/483 (2013.01); H02M 2001/0058 (2013.01); H02M 2007/4835 (2013.01);
Abstract

A driving method for power semiconductor switches in an H-bridge circuit is provided. The method includes: calculating a start time and an end time of a zero level of an output voltage and determining a zero level section based on the start time and end time of the zero level; and driving an upper power semiconductor switch of a first bridge arm and an upper power semiconductor switch of a second bridge arm to be on simultaneously or driving a lower power semiconductor switch of the first bridge arm and a lower power semiconductor switch of the second bridge arm to be on simultaneously in the zero level section.


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