The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

May. 26, 2015
Applicant:

Kabushiki Kaisha Toyota Jidoshokki, Kariya-shi, Aichi, JP;

Inventors:

Takashi Mohri, Kariya, JP;

Masataka Nakanishi, Kariya, JP;

Hiroki Oshima, Kariya, JP;

Masanori Harata, Kariya, JP;

Nobuhiro Goda, Kariya, JP;

Assignee:

KABUSHIKI KAISHA TOYOTA JIDOSHOKKI, Kariya-shi, Aichi, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 4/38 (2006.01); C01B 33/021 (2006.01); H01M 10/0525 (2010.01); C01B 33/12 (2006.01); C01B 33/02 (2006.01); H01M 4/48 (2010.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/386 (2013.01); C01B 33/02 (2013.01); C01B 33/021 (2013.01); C01B 33/12 (2013.01); H01M 4/48 (2013.01); H01M 10/0525 (2013.01); C01P 2002/60 (2013.01); C01P 2006/12 (2013.01); C01P 2006/40 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01);
Abstract

A silicon material useful as a negative electrode active material is provided. The silicon material has a band gap within a range of greater than 1.1 eV and not greater than 1.7 eV. A secondary battery in which this silicon material is used as a negative electrode active material has improved initial efficiency.


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