The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jun. 03, 2016
Applicants:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Samsung Sdi Co., Ltd., Yongin-si, Gyeonggi-do, KR;
Inventors:
Jinsoo Mun, Seoul, KR;
Gyusung Kim, Suwon-si, KR;
Heechul Jung, Gunpo-si, KR;
Junho Park, Seoul, KR;
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
SAMSUNG SDI CO., LTD., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01M 4/00 (2006.01); H01M 4/13 (2010.01); H01M 4/42 (2006.01); H01M 4/58 (2010.01); H01M 4/82 (2006.01); H01M 6/00 (2006.01); H01M 4/36 (2006.01); H01M 4/38 (2006.01); H01M 10/0525 (2010.01); H01M 4/62 (2006.01); H01M 4/02 (2006.01);
U.S. Cl.
CPC ...
H01M 4/366 (2013.01); H01M 4/386 (2013.01); H01M 4/624 (2013.01); H01M 4/628 (2013.01); H01M 10/0525 (2013.01); H01M 2004/027 (2013.01);
Abstract
A composite anode active material includes: a silicon anode active material, a metal nitride; and a metal fluoride, wherein the metal nitride and the metal fluoride are each independently disposed on at least one surface of the silicon anode active material.