The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Aug. 24, 2010
Michael S. Leung, Goleta, CA (US);
Eric J. Tarsa, Goleta, CA (US);
James Ibbetson, Santa Barbara, CA (US);
Michael S. Leung, Goleta, CA (US);
Eric J. Tarsa, Goleta, CA (US);
James Ibbetson, Santa Barbara, CA (US);
CREE, INC., Durham, NC (US);
Abstract
A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.