The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Oct. 31, 2017
Applicant:

Lumileds Llc, San Jose, CA (US);

Inventors:

Jonathan J. Wierer, San Jose, CA (US);

Aurelien Jean Francois David, San Jose, CA (US);

Henry Kwong-Hin Choy, San Jose, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); H01L 33/22 (2010.01); H01L 33/24 (2010.01); H01L 33/26 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01); H01L 33/22 (2013.01); H01L 33/32 (2013.01); H01L 33/24 (2013.01); H01L 33/26 (2013.01); H01L 2933/0016 (2013.01);
Abstract

A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.


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