The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Aug. 01, 2017
Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Yohei Ito, Kyoto, JP;

Yoichi Mugino, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/40 (2010.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/08 (2010.01); H01L 33/24 (2010.01); H01L 33/60 (2010.01); H01L 33/42 (2010.01); H01L 33/44 (2010.01); H01L 33/46 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/405 (2013.01); H01L 33/0025 (2013.01); H01L 33/0079 (2013.01); H01L 33/04 (2013.01); H01L 33/08 (2013.01); H01L 33/24 (2013.01); H01L 33/42 (2013.01); H01L 33/44 (2013.01); H01L 33/60 (2013.01); H01L 33/38 (2013.01); H01L 33/46 (2013.01); H01L 2924/0002 (2013.01);
Abstract

The present invention provides a semiconductor light emitting device with a simple structure and capable of improving light extraction efficiency. The semiconductor light emitting deviceincludes a substrate, a metal layeron the substrate, a light-transmitting conductive layeron the metal layer, an insulation layeron the light-transmitting conductive layer, and a III-V semiconductor structureon the insulation layer. The III-V semiconductor structureincludes a light emitting layer, a p-type semiconductor layer, and an n-type semiconductor layer. A refractive index nof a p-type GaP contact layerof the p-type semiconductor layer, a refractive index nof the insulation layer, and a refractive index nof the light-transmitting conductive layersatisfy the relation: n>n<n


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