The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Jun. 27, 2017
Applicants:

Advanced Optoelectronic Technology, Inc., Hsinchu Hsien, TW;

Innolux Corporation, Miao-Li County, TW;

Inventors:

Po-Min Tu, Hsinchu, TW;

Chien-Shiang Huang, Hsinchu, TW;

Chien-Chung Peng, Hsinchu, TW;

Tzu-Chien Hung, Hsinchu, TW;

Shih-Cheng Huang, Hsinchu, TW;

Chang-Ho Chen, Hsinchu, TW;

Tsau-Hua Hsieh, Hsinchu, TW;

Jong-Jan Lee, Osaka, JP;

Paul-John Schuele, Osaka, JP;

Assignees:

ADVANCED OPTOELECTRONIC TECHNOLOGY, INC., Hsinchu Hsien, TW;

Innolux Corporation, Miao-Li County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/24 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/00 (2013.01); H01L 33/0079 (2013.01); H01L 33/24 (2013.01); H01L 33/44 (2013.01); H01L 33/12 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A flip chip light emitting diode includes a semiconductor layer comprising an epitaxial layer an N-semiconductor layer, a light active layer and a P-semiconductor layer arranged from top to bottom in series. A first electrode mounted on the semiconductor layer. A second electrode mounted on the semiconductor layer. A insulating layer mounted on the semiconductor layer. The N-semiconductor layer protrudes away from the epitaxial layer to form a protruding portion. The light active layer and the P-semiconductor layer mounts on the protruding portion in series. The insulating layer mounts between the first electrode and the protruding portion, the light active layer, the P-semiconductor layer and the second electrode. The flip chip light emitting diode also comprises a supporting portion, the supporting portion is mounted on a top surface of the epitaxial layer by a connecting portion. The connecting portion has same or different materials with the supporting portion.


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