The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Mar. 29, 2016
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Asako Hirai, Regensburg, DE;
Tobias Meyer, Regensburg, DE;
Philipp Drechsel, Regensburg, DE;
Peter Stauß, Regensburg, DE;
Anna Nirschl, Regenstauf, DE;
Alvaro Gomez-Iglesias, Regensburg, DE;
Tobias Niebling, Regensburg, DE;
Bastian Galler, Regensburg, DE;
OSRAM Opto Semiconductors GmbH, Regensburg, DE;
Abstract
An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions.