The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

May. 17, 2015
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Shigeo Yoshii, Osaka, JP;

Junji Hirase, Osaka, JP;

Daisuke Ueda, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 49/02 (2006.01); H01L 27/30 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/861 (2013.01); H01L 27/1225 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14665 (2013.01); H01L 27/307 (2013.01); H01L 28/40 (2013.01); H01L 29/7869 (2013.01); H01L 29/8613 (2013.01);
Abstract

An imaging device includes a semiconductor substrate comprising a first semiconductor; and a unit pixel cell provided to the semiconductor substrate. The unit pixel cell includes: a photoelectric converter that includes a pixel electrode and a photoelectric conversion layer, the photoelectric converter converting incident light into electric charges; a charge detection transistor that includes a part of the semiconductor substrate and detects the electric charges; and a reset transistor that includes at least a part of a first semiconductor layer comprising a second semiconductor and initializes a voltage of the photoelectric converter. The pixel electrode is located above the charge detection transistor. The reset transistor is located between the charge detection transistor and the pixel electrode. A band gap of the second semiconductor is larger than a band gap of the first semiconductor.


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