The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Nov. 19, 2015
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Hisao Ochi, Sakai, JP;
Tohru Daitoh, Sakai, JP;
Hajime Imai, Sakai, JP;
Tetsuo Fujita, Sakai, JP;
Hideki Kitagawa, Sakai, JP;
Tetsuo Kikuchi, Sakai, JP;
Masahiko Suzuki, Sakai, JP;
Shingo Kawashima, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, Osaka, JP;
Abstract
A semiconductor device (A) includes a substrate () and a thin film transistor () supported by the substrate. The thin film transistor includes a gate electrode (), an oxide semiconductor layer (), a gate insulating layer (), a source electrode () and a drain electrode (). The oxide semiconductor layer includes an upper semiconductor layer () which is in contact with the source electrode and the drain electrode and which has a first energy gap, and a lower semiconductor layer () which is provided under the upper semiconductor layer and which has a second energy gap that is smaller than the first energy gap. The source electrode and the drain electrode include a lower layer electrode () which is in contact with the oxide semiconductor layer and which does not contain Cu, and a major layer electrode () which is provided over the lower layer electrode and which contains Cu. An edge of the lower layer electrode is at a position ahead of an edge of the major layer electrode.