The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Feb. 09, 2017
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventors:
Assignee:
Renesas Electronics Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 29/0634 (2013.01); H01L 29/1095 (2013.01); H01L 29/401 (2013.01); H01L 29/404 (2013.01); H01L 29/407 (2013.01); H01L 29/408 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 21/26513 (2013.01); H01L 21/26586 (2013.01);
Abstract
To provide a semiconductor device equipped with a snubber portion having an improved withstand voltage and capable of reducing a surge voltage at turn-off of an insulated gate field effect transistor portion. The concentration of a first conductivity type impurity in a snubber semiconductor region is greater than that in a drift layer. The thickness of a snubber insulating film between the snubber semiconductor region and a snubber electrode is greater than that of a gate insulating film between a gate electrode and a body region.