The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Apr. 18, 2014
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Erwan Morvan, Montagne, FR;
Abstract
The invention relates to a method for manufacturing a heterojunction transistor (), said method comprising the steps of: forming an implanted area () by ionically implanting magnesium, calcium, zinc, or fluorine in a first gallium nitride semiconductor layer (), having a hexagonal crystalline structure, in the [0 0 0 1] orientation of said crystalline structure; forming a second semiconductor layer () on the first semiconductor layer so as to form an electron gas layer () at the interface between the first and second layers; and forming a control gate () over the second conductive layer () and vertically in line with the implanted area ().