The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jun. 27, 2017
Fuji Electric Co., Ltd., Kanagawa, JP;
Japan Aerospace Exploration Agency, Tokyo, JP;
Shuhei Tatemichi, Matsumoto, JP;
Shunji Takenoiri, Matsumoto, JP;
Masanori Inoue, Ina, JP;
Yuji Kumagai, Matsumoto, JP;
Satoshi Kuboyama, Ibaraki, JP;
Eiichi Mizuta, Ibaraki, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Japan Aerospace Exploration Agency, Tokyo, JP;
Abstract
A semiconductor device with a high radiation tolerance is provided. A semiconductor device comprising a semiconductor substrate, a first body region and a second body region provided on a front surface side of the semiconductor substrate, a neck portion provided between the first body region and the second body region, a first source region formed within the first body region and a second source region formed within the second body region, a first gate electrode provided to face the first body region between the first source region and the neck portion, a second gate electrode provided to face the second body region between the second source region and the neck portion, and an insulating film continuously provided between the first gate electrode and the semiconductor substrate, between the second gate electrode and the semiconductor substrate, and on the front surface side of the neck portion, is provided.