The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

May. 25, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jin-bum Kim, Seoul, KR;

Chul-sung Kim, Seongnam-si, KR;

Deok-han Bae, Anyang-si, KR;

Bon-young Koo, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H01L 21/82 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41783 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/0924 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 29/7848 (2013.01); H01L 21/823814 (2013.01); H01L 29/165 (2013.01);
Abstract

A semiconductor device may include a substrate including an NMOS region and a PMOS region, and having a protrusion pattern; first and second gate structures respectively formed on the NMOS region and the PMOS region of the substrate, crossing the protrusion pattern, and extending along a first direction that is parallel to an upper surface of the substrate; first and second source/drain regions formed on both sides of the first and second gate structures; and first and second contact plugs respectively formed on the first and second source/drain regions, wherein the first contact plug and the second contact plug are asymmetric. Methods of manufacturing are also provided.


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