The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Sep. 05, 2017
Applicant:
Panasonic Corporation, Osaka, JP;
Inventors:
Assignee:
PANASONIC CORPORATION, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/808 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/778 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0661 (2013.01); H01L 29/0619 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/808 (2013.01); H01L 29/1066 (2013.01); H01L 29/42316 (2013.01);
Abstract
A nitride semiconductor device includes a substrate; a nitride semiconductor layered structure disposed on the substrate and having a channel region; a first electrode and a second electrode both disposed on the nitride semiconductor layered structure; a first p-type nitride semiconductor layer disposed between the first electrode and the second electrode; and a first gate electrode disposed on the first p-type nitride semiconductor layer. The nitride semiconductor layered structure includes a first recess. The first p-type nitride semiconductor layer is at least partially disposed inside the first recess, and is separated from a side surface of the first recess.