The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Sep. 21, 2017
Ki-seok Suh, Hwaseong-si, KR;
Jae-chul Shim, Hwaseong-si, KR;
Kil-ho Lee, Busan, KR;
Yong-seok Chung, Seoul, RE;
Gwan-hyeob Koh, Seoul, KR;
Yoon-jong Song, Hwaseong-si, KR;
Ki-Seok Suh, Hwaseong-si, KR;
Jae-Chul Shim, Hwaseong-si, KR;
Kil-Ho Lee, Busan, KR;
Yong-Seok Chung, Seoul, RE;
Gwan-Hyeob Koh, Seoul, KR;
Yoon-Jong Song, Hwaseong-si, KR;
Abstract
A method of manufacturing an MRAM device includes sequentially forming a first insulating interlayer and an etch-stop layer on a substrate. A lower electrode is formed through the etch-stop layer and the first insulating interlayer. An MTJ structure layer and an upper electrode are sequentially formed on the lower electrode and the etch-stop layer. The MTJ structure layer is patterned by a physical etching process using the upper electrode as an etching mask to form an MTJ structure at least partially contacting the lower electrode. The first insulating interlayer is protected by the etch-stop layer so not to be etched by the physical etching process.