The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jul. 15, 2016
Applicant:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Inventor:
Takuro Ohmaru, Fukuoka, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 27/146 (2006.01); H01L 29/786 (2006.01); H01L 31/0272 (2006.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14616 (2013.01); H01L 27/14607 (2013.01); H01L 27/14618 (2013.01); H01L 27/14625 (2013.01); H01L 29/7869 (2013.01); H01L 31/0272 (2013.01); H04N 5/378 (2013.01); H04N 5/37455 (2013.01);
Abstract
An imaging device capable of obtaining high-quality imaging data is provided. The imaging device can correct variation in the threshold voltage of amplifier transistors included in pixel circuits. The amplifier transistor includes two gates facing each other with a channel formation region provided therebetween. The amplifier transistor operates in such a manner that one of the gates holds a potential for correcting variation in the threshold voltage and the other thereof is supplied with a potential corresponding to imaging data.