The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

May. 16, 2017
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Daisuke Kubota, Atsugi, JP;

Yuji Iwaki, Isehara, JP;

Kensuke Yoshizumi, Isehara, JP;

Mari Tateishi, Ebina, JP;

Natsuko Takase, Atsugi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 31/036 (2006.01); H01L 27/12 (2006.01); G02F 1/1335 (2006.01); G02F 1/1362 (2006.01); G02F 1/1333 (2006.01); G02F 1/1345 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/13458 (2013.01); G02F 1/133305 (2013.01); G02F 1/133528 (2013.01); G02F 1/136286 (2013.01); H01L 27/1225 (2013.01); G02F 2001/136222 (2013.01); H01L 27/3276 (2013.01);
Abstract

A highly reliable display device is provided. The display device includes a first substrate, a first resin layer over the first substrate, a pixel portion and a terminal portion over the first resin layer, a second resin layer over the terminal portion, and a second substrate over the second resin layer. The pixel portion includes a transistor and a display element electrically connected to the transistor. The terminal portion includes a conductive layer. The first resin layer includes an opening. The conductive layer includes a first region that is exposed in the opening in the first resin layer. The second resin layer includes a region overlapping with the first region. The conductive layer is the same layer as at least one of a gate of the transistor and a source and a drain of the transistor.


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