The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jul. 25, 2016
Nutech Ventures, Lincoln, NE (US);
Alexander Sinitskii, Lincoln, NE (US);
Alexei Grouverman, Lincoln, NE (US);
Alexey Lipatov, Lincoln, NE (US);
NUtech Ventures, Lincoln, NE (US);
Abstract
A ferroelectric random-access memory structure and processes for fabricating a ferroelectric random-access memory structure are described that includes using a molybdenum sulfide layer. In an implementation, a ferroelectric random-access memory structure in accordance with an exemplary embodiment includes at least one FeFET, which further includes a substrate; a back gate electrode formed on the substrate, the back gate electrode including a conductive layer; a gate dielectric substrate formed on the back gate electrode; a source electrode formed on the gate dielectric substrate; a drain electrode formed on the gate dielectric substrate; and a layered transition metal dichalcogenide disposed on the gate dielectric substrate and contacting the source electrode and the drain electrode.