The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Mar. 24, 2017
Renesas Electronics Corporation, Tokyo, JP;
Shinichiro Abe, Tokyo, JP;
Masaaki Shinohara, Tokyo, JP;
Renesas Electronics Corporation, Tokyo, JP;
Abstract
In a MONOS memory, withstand voltage is increased between a control gate electrode over an ONO film having a charge accumulating part and a semiconductor substrate. When a silicon film is processed to form a control gate electrode, dry etching is performed for a relatively long time, thereby a recess is formed in a sidewall of the control gate electrode. Subsequently, the control gate electrode is subjected to dry oxidation treatment to form an insulating film on the sidewall of the control gate electrode including the recess, thereby an end of the bottom of the control gate electrode is separated from an end of the top of the ONO film.