The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Oct. 16, 2017
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventors:
Assignee:
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/31 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3171 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a semiconductor element formed in or on the semiconductor substrate, a metal layer connected to the semiconductor element, and a passivation film that protects the semiconductor element. The passivation film is formed by alternately stacking a first insulation film that has larger tensile stress and a second insulation film that has smaller tensile stress. Each of the first insulation film and the second insulation film is one of a silicon nitride film, a silicon oxide film, and a silicon oxynitride film. The passivation film as a whole generates tensile stress.