The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2018

Filed:

Aug. 11, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Bo Zheng, Saratoga, CA (US);

Avgerinos V. Gelatos, Redwood City, CA (US);

Anshul Vyas, Milpitas, CA (US);

Raymond Hoiman Hung, Palo Alto, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01); C23C 16/02 (2006.01); H01L 21/02 (2006.01); C23C 16/44 (2006.01); C23C 16/48 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02661 (2013.01); C23C 16/0245 (2013.01); C23C 16/4405 (2013.01); C23C 16/481 (2013.01); H01L 21/02046 (2013.01); H01L 21/02049 (2013.01); H01L 21/02057 (2013.01); H01L 21/02381 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/67115 (2013.01); H01L 21/67184 (2013.01); H01L 21/67207 (2013.01);
Abstract

The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.


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