The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Oct. 31, 2017
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Andrew Joseph Kelly, Hsinchu County, TW;
Yi-Hsiu Chen, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
An etching method with a surface modification treatment for forming a semiconductor structure is provided. The method includes providing a semiconductor substrate, forming a silicon nitride (SiN) layer on the semiconductor substrate, and forming a silicon-containing layer on the semiconductor substrate and beside the SiN layer. The silicon-containing layer includes a silicon dioxide layer, a n-type silicon-containing layer, a p-type silicon-containing layer or a combination thereof. The method further includes performing a surface modification treatment onto the SiN layer and the silicon-containing layer by using a surface modification solution, thereby forming a modified layer on the SiN layer and the silicon-containing layer. The method further includes removing a portion of the modified layer and its underlying SiN layer by a wet etching operation, while the other portion of the modified layer and its underlying silicon-containing layer remain, and removing the other portion of the modified layer.