The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Sep. 26, 2017
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyun-jun Yoon, Changwon-si, KR;
Il-han Park, Suwon-si, KR;
Na-young Choi, Hwaseong-si, KR;
Seung-hwan Song, Incheon, KR;
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a read method for a nonvolatile memory device for reading data with an optimum read voltage. The read method includes reading data of a first set of memory cells connected to a first word line, by dividing the data of the first set of memory cells into M pages and individually reading data from the M pages. The reading data includes performing an on-chip valley search (OVS) operation on a first valley of two adjacent threshold voltage distributions of the first set of memory cells when reading each of the M pages, and performing a data recover read operation via a read operation on a second word line adjacent to the first word line, based on a result of the OVS operation. In the data recover read operation, a read operation on the first word line is not performed.