The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jul. 12, 2017
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 7/22 (2006.01); G11C 7/12 (2006.01); G11C 7/14 (2006.01); G11C 7/18 (2006.01); G11C 8/14 (2006.01); G11C 29/02 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 7/227 (2013.01); G11C 7/12 (2013.01); G11C 7/14 (2013.01); G11C 7/18 (2013.01); G11C 7/22 (2013.01); G11C 7/225 (2013.01); G11C 8/14 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/32 (2013.01); G11C 29/02 (2013.01);
Abstract
A non-volatile memory device includes a cell string, a ground select transistor, and at least one dummy cell. The cell string includes at least one memory cell. The at least one dummy cell is provided between the at least one memory cell and the ground select transistor and is connected to a bit line. A controller executes dummy cell control logic configured to control a gate voltage of the at least one dummy cell to be lower than a threshold voltage of the at least one dummy cell in at least a part of a pre-charge period.