The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Aug. 22, 2016
Renesas Electronics Corporation, Tokyo, JP;
Photonics Electronics Technology Research Association, Tokyo, JP;
Tatsuya Usami, Hitachinaka, JP;
Keiji Sakamoto, Hitachinaka, JP;
Yoshiaki Yamamoto, Hitachinaka, JP;
Shinichi Watanuki, Hitachinaka, JP;
Masaru Wakabayashi, Hitachinaka, JP;
Tohru Mogami, Tokyo, JP;
Tsuyoshi Horikawa, Tokyo, JP;
Keizo Kinoshita, Tokyo, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
PHOTONICS ELECTRONICS TECHNOLOGY RESEARCH ASSOCIATION, Tokyo, JP;
Abstract
A semiconductor device is provided with an insulating layer formed on a base substrate, an optical waveguide composed of a semiconductor layer formed on the insulating layer, and an insulating film formed along an upper surface of the insulating layer and a front surface of the optical waveguide. A peripheral edge portion of a lower surface of the optical waveguide is separated from the insulating layer, and the insulating film is buried between the peripheral edge portion and the insulating layer.