The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Jan. 09, 2015
Applicant:

Koninklijke Philips N.v., Eindhoven, NL;

Inventors:

Holger Möench, Vaals, NL;

Guenther Hans Derra, Aachen, DE;

Stephan Gronenborn, Aachen, DE;

Pavel Pekarski, Aachen, DE;

Johanna Sophie Kolb, Aachen, DE;

Ralf Gordon Conrads, Kempen, DE;

Assignee:

KONINKLIJKE PHILIPS N.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05B 3/00 (2006.01); H01L 21/67 (2006.01); C23C 16/46 (2006.01); C23C 16/48 (2006.01); C30B 23/06 (2006.01); C30B 25/10 (2006.01); H01L 51/56 (2006.01); H05B 1/02 (2006.01);
U.S. Cl.
CPC ...
H05B 3/0047 (2013.01); C23C 16/46 (2013.01); C23C 16/481 (2013.01); C30B 23/063 (2013.01); C30B 25/105 (2013.01); H01L 21/67115 (2013.01); H01L 51/56 (2013.01); H05B 1/0233 (2013.01);
Abstract

The invention describes a heating system () and a corresponding method of heating a heating surface () of an object () to a processing temperature of at least 100° C., wherein the heating system () comprises semiconductor light sources (), and wherein the heating system () is adapted to heat an area element of the heating surface () with at least 50 semiconductor light sources () at the same time. The heating system () may be part of a reactor for processing semiconductor structures. The light emitted by means of the semiconductor light sources () overlaps at the heating surface (). Differences of the characteristic of one single semiconductor light source () may be blurred at the heating surface () such that a homogeneous temperature distribution across a processing surface of a, for example, wafer may be enabled.


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