The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Mar. 29, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventor:
Woonyun Kim, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/02 (2006.01); H03F 3/195 (2006.01); H03F 3/24 (2006.01); H03F 3/50 (2006.01); H04B 1/04 (2006.01); H03F 3/19 (2006.01); H04B 1/38 (2015.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 1/0266 (2013.01); H03F 3/19 (2013.01); H03F 3/195 (2013.01); H03F 3/245 (2013.01); H03F 3/50 (2013.01); H04B 1/04 (2013.01); H03F 2200/111 (2013.01); H03F 2200/18 (2013.01); H03F 2200/451 (2013.01); H04B 1/38 (2013.01); H04B 2001/0408 (2013.01);
Abstract
An adaptive bias circuit for a power amplifier may include a terminal node coupled to the power amplifier. The adaptive bias circuit may also include a low impedance bias circuit coupled to the terminal node. The adaptive bias circuit may further include a high drive bias circuit coupled to the low impedance bias circuit through the terminal node. A separation device may be arranged between the low impedance bias circuit and the high drive bias circuit.