The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Dec. 15, 2017
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Jrjyan Jerry Chen, Campbell, CA (US);
Xiangxin Rui, Campbell, CA (US);
Soo Young Choi, Fremont, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5256 (2013.01); H01L 21/6719 (2013.01); H01L 21/67167 (2013.01); H01L 21/67207 (2013.01); H01L 21/67742 (2013.01); H01L 21/68742 (2013.01); H01L 21/68785 (2013.01); H01L 21/68792 (2013.01);
Abstract
Embodiments described herein generally relate to a method and apparatus for encapsulating an OLED structure, more particularly, to a TFE structure for an OLED structure. The TFE structure includes at least one dielectric layer and at least two barrier layers, and the TFE structure is formed over the OLED structure. The at least one dielectric layer is deposited by atomic layer deposition (ALD). Having the at least one dielectric layer formed by ALD in the TFE structure improves the barrier performance of the TFE structure.