The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Apr. 28, 2017
Applicant:

Korea Research Institute of Chemical Technology, Daejeon, KR;

Inventors:

Yun Ho Kim, Daejeon, KR;

Sung Mi Yoo, Daejeon, KR;

So Hee Kim, Daejeon, KR;

Mihye Yi, Daejeon, KR;

Jae Won Ka, Daejeon, KR;

Jinsoo Kim, Daejeon, KR;

Jong Chan Won, Daejeon, KR;

Kwang Suk Jang, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08L 37/00 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/10 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0035 (2013.01); C08L 37/00 (2013.01); H01L 51/0052 (2013.01); H01L 51/0074 (2013.01); C08L 2203/20 (2013.01); C08L 2205/025 (2013.01); H01L 51/0026 (2013.01); H01L 51/052 (2013.01); H01L 51/0545 (2013.01); H01L 51/0566 (2013.01); H01L 51/105 (2013.01); H01L 2251/301 (2013.01);
Abstract

The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.


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