The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Sep. 05, 2017
Applicant:

Toshiba Memory Corporation, Minato-ku, Tokyo, JP;

Inventors:

Kazuhiko Yamamoto, Yokkaichi Mie, JP;

Yosuke Murakami, Yokkaichi Mie, JP;

Yusuke Arayashiki, Yokkaichi Mie, JP;

Yusuke Kobayashi, Kuwana Mie, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); G11C 13/0007 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/148 (2013.01); G11C 13/004 (2013.01); G11C 2013/0045 (2013.01); G11C 2213/32 (2013.01); G11C 2213/33 (2013.01); G11C 2213/51 (2013.01); G11C 2213/52 (2013.01); G11C 2213/55 (2013.01); H01L 27/2463 (2013.01); H01L 45/1253 (2013.01);
Abstract

A memory device includes a first conductive layer, a second conductive layer, and a variable resistance layer provided between the first and second conductive layers. The variable resistance layer includes a first layer having a semiconductor or a first metal oxide containing a first metal, and a second layer provided between the first layer and the second conductive layer, having a second metal oxide containing a second metal, and having crystal grains that are not in contact with at least one of an end face of the second layer on a side of the first conductive layer or an end face of the second layer on a side of the second conductive layer.


Find Patent Forward Citations

Loading…