The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2018

Filed:

Jul. 30, 2012
Applicants:

Grigoriy Basin, San Francisco, CA (US);

John Edward Epler, San Jose, CA (US);

Paul Scott Martin, Livermore, CA (US);

Inventors:

Grigoriy Basin, San Francisco, CA (US);

John Edward Epler, San Jose, CA (US);

Paul Scott Martin, Livermore, CA (US);

Assignee:

Lumileds LLC, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/48 (2010.01); H01L 33/50 (2010.01); H01L 33/00 (2010.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/48 (2013.01); H01L 21/6836 (2013.01); H01L 24/83 (2013.01); H01L 24/94 (2013.01); H01L 33/005 (2013.01); H01L 33/0079 (2013.01); H01L 33/50 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 33/0095 (2013.01); H01L 33/22 (2013.01); H01L 33/501 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0346 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/27436 (2013.01); H01L 2224/29191 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/83005 (2013.01); H01L 2224/8309 (2013.01); H01L 2224/83097 (2013.01); H01L 2224/83191 (2013.01); H01L 2224/83209 (2013.01); H01L 2224/94 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15788 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A method according to embodiments of the invention includes positioning a flexible film () over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure () including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate () via the flexible film (). After bonding, the flexible film () is in direct contact with the semiconductor structures (). The method further includes dividing the wafer after bonding the wafer to the substrate ().


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