The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Apr. 04, 2016
Semicon Light Co., Ltd., Gyeonggi-do, KR;
Soo Kun Jeon, Gyeonggi-do, KR;
Jun Chun Park, Gyeonggi-do, KR;
Il Gyun Choi, Gyeonggi-do, KR;
Sung Gi Lee, Gyeonggi-do, KR;
Dae Soo Soul, Gyeonggi-do, KR;
Tea Jin Kim, Gyeonggi-do, KR;
Yeon Ho Jeong, Gyeonggi-do, KR;
Geun Mo Jin, Gyeonggi-do, KR;
Sung Chan Lee, Gyeonggi-do, KR;
SEMICON LIGHT CO., LTD., Gyeonggi-Do, KR;
Abstract
Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to one of the plurality of semiconductor layers.