The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Oct. 16, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Joel P. De Souza, Putam Valley, NY (US);
Yun Seog Lee, Seoul, KR;
Ning Li, White Plains, NY (US);
Devendra Sadana, Pleasantville, NY (US);
Yao Yao, Poughkeepsie, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/109 (2006.01); H01L 31/0336 (2006.01); H01L 29/861 (2006.01); H01L 31/18 (2006.01); H01L 31/0224 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/109 (2013.01); H01L 29/66136 (2013.01); H01L 31/022408 (2013.01); H01L 31/0336 (2013.01); H01L 31/18 (2013.01); H01L 21/0228 (2013.01); H01L 21/0262 (2013.01); H01L 21/02178 (2013.01); H01L 21/02549 (2013.01); H01L 21/02554 (2013.01);
Abstract
A semiconductor device is formed using an n-type layer of Zinc Oxide, a p-type layer formed of a narrow bandgap material. The narrow bandgap material uses a group 3A element and a group 5A element. A junction is formed between the n-type layer and the p-type layer, the junction being operable as a heterojunction diode having a rectifying property at a temperature range, the temperature range having a high limit at room temperature.