The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Mar. 24, 2017
Renesas Electronics Corporation, Tokyo, JP;
Tatsuya Usami, Hitachinaka, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
There is to provide a semiconductor device including a light receiving element capable of reducing the manufacturing cost and improving the optical performance of the light receiving element. For example, a p type germanium layer, an intrinsic germanium layer, and an n type germanium layer forming the structure body of a Ge photodiode are formed according to a continuous selective epitaxial growth. An insulating film having an opening portion is formed on the silicon layer of a SOI substrate, and an intrinsic germanium layer is formed bulging from the opening portion to above the insulating film. In short, by using the insulating film having the opening portion, the cross section of the intrinsic germanium layer is formed into a mushroom shape.