The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
May. 28, 2015
Sharp Kabushiki Kaisha, Sakai, Osaka, JP;
Akihiro Oda, Sakai, JP;
Sharp Kabushiki Kaisha, Sakai, JP;
Abstract
A semiconductor device () includes a thin film transistor () provided on a substrate and including a gate electrode (), a gate insulating layer () in contact with the gate electrode, an oxide semiconductor layer () located so as to partially overlap the gate electrode with the gate insulating layer being located between the oxide semiconductor layer and the gate electrode, a source electrode (), and a drain electrode (). The oxide semiconductor layer () includes a gate facing region () overlapping the gate electrode as seen in a direction of normal to the substrate; and offset regions () provided adjacent to the gate facing region, the offset regions not overlapping the gate electrode, the source electrode or the drain electrode as seen in the direction of normal to the substrate. The gate facing region has a carrier concentration in the range of 1×10/cmor greater and 1×10/cmor less.