The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Mar. 05, 2018
Applicant:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/205 (2006.01); H01L 29/36 (2006.01); H01L 29/778 (2006.01); H01L 29/49 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/36 (2013.01); H01L 29/4966 (2013.01);
Abstract
A semiconductor device includes a first semiconductor layer of silicon carbide, a second semiconductor layer of nitride semiconductor, a third semiconductor layer of nitride semiconductor and a drain electrode. The semiconductor device includes a source electrode that has a first projection portion, a conduction electrode that has a second projection portion and a gate electrode. The first semiconductor layer includes a first region, a second region, a third region and a fourth region.